PF0121
PF0121 is MOS FET Power Amplifier Module for GSM Mobile Phone manufactured by Hitachi Semiconductor.
Features
- Low power control current: 0.9 m A Typ
- High speed switching: 1.5 µsec Typ
- Wide power control range: 100 d B Typ
Pin Arrangement
- RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout
G GND
Z1
FB1
C2
FB2
C1
Z2
Pin
VAPC
Pout
C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 6 8 20
- 30 to +110
- 40 to +110 Unit V A V m W °C °C
Electrical Characteristics (Tc = 25°C)
Item Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Stability Symbol I DS ηT 2nd H.D. 3rd H.D. Min
- 30
- - Typ
- 35
- 50
- 55 2 23 12
- 60 1.5 Max 500
- - 40
- 45 3
- -
- 40 2 Unit µA % d Bc d Bc
- W W d Bm µs Pin = 2 m W, VDD = 12.5 V, VAPC = 7 V, RL =Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 10.3V, VAPC = 7 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 2 m W, VDD = 12.5 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 12.5 V, Pout = 13 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 12.5 V, Pout ≤ 13 W (at APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 20:1 All phases Test Condition VDD = 17 V, VAPC = 0 V Pin = 2 m W, VDD = 12.5 V, Pout = 13 W (at APC controlled), RL = Rg = 50 Ω, Tc = 25°C
VSWR (in)
- Pout (1) Pout (2)
- t r, t...