• Part: PF0121
  • Description: MOS FET Power Amplifier Module for GSM Mobile Phone
  • Manufacturer: Hitachi Semiconductor
  • Size: 51.97 KB
Download PF0121 Datasheet PDF
Hitachi Semiconductor
PF0121
PF0121 is MOS FET Power Amplifier Module for GSM Mobile Phone manufactured by Hitachi Semiconductor.
Features - Low power control current: 0.9 m A Typ - High speed switching: 1.5 µsec Typ - Wide power control range: 100 d B Typ Pin Arrangement - RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC Pout C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 6 8 20 - 30 to +110 - 40 to +110 Unit V A V m W °C °C Electrical Characteristics (Tc = 25°C) Item Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Stability Symbol I DS ηT 2nd H.D. 3rd H.D. Min - 30 - - Typ - 35 - 50 - 55 2 23 12 - 60 1.5 Max 500 - - 40 - 45 3 - - - 40 2 Unit µA % d Bc d Bc - W W d Bm µs Pin = 2 m W, VDD = 12.5 V, VAPC = 7 V, RL =Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 10.3V, VAPC = 7 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 2 m W, VDD = 12.5 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 12.5 V, Pout = 13 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 12.5 V, Pout ≤ 13 W (at APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 20:1 All phases Test Condition VDD = 17 V, VAPC = 0 V Pin = 2 m W, VDD = 12.5 V, Pout = 13 W (at APC controlled), RL = Rg = 50 Ω, Tc = 25°C VSWR (in) - Pout (1) Pout (2) - t r, t...