• Part: PF01410A
  • Description: MOS FET Power Amplifier Module for GSM Handy Phone
  • Manufacturer: Hitachi Semiconductor
  • Size: 25.37 KB
Download PF01410A Datasheet PDF
Hitachi Semiconductor
PF01410A
PF01410A is MOS FET Power Amplifier Module for GSM Handy Phone manufactured by Hitachi Semiconductor.
Features - - - - 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50 - 30 to +100 - 30 to +100 4 Unit V A V m W °C °C W Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 890 0.1 - 38 - - - 2.8 Typ - - - 45 - 45 - 45 1.5 3.3 Max 915 2.5 100 - - 35 - 35 3.0 - Unit MHz V µA % d Bc d Bc - W Pin = +8 d Bm, V DD = 4.8 V, VAPC = 2.5 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 d Bm, V DD = 4 V, VAPC = 2.5 V, RL = Rg = 50Ω, Tc = 85°C Pin = +12.5 d Bm, VDD = 4.8 V, VAPC = 0.1 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 d Bm, V DD = 4.8 V, RL = Rg = 50Ω, Tc = 25°C Time from Pout = - 10 to +34.5 d Bm Pin = +8 d Bm, V DD = 7 V, Pout ≤ 2.8 W (At APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 8 : 1 All phases Test Condition - - VDD = 10 V, VAPC = 0 V Pin = +8 d Bm, V DD = 4.8 V, Pout = 2.8 W (At APC controlled) RL = Rg = 50Ω, Tc = 25°C Output power (2) Pout (2) - W Isolation - - - 35 - 20 d Bm Switching time t r, t f -...