PF01410A
PF01410A is MOS FET Power Amplifier Module for GSM Handy Phone manufactured by Hitachi Semiconductor.
Features
- -
- - 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec
Pin Arrangement
3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50
- 30 to +100
- 30 to +100 4 Unit V A V m W °C °C W
Electrical Characteristics (Tc = 25°C)
Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 890 0.1
- 38
- -
- 2.8 Typ
- -
- 45
- 45
- 45 1.5 3.3 Max 915 2.5 100
- - 35
- 35 3.0
- Unit MHz V µA % d Bc d Bc
- W Pin = +8 d Bm, V DD = 4.8 V, VAPC = 2.5 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 d Bm, V DD = 4 V, VAPC = 2.5 V, RL = Rg = 50Ω, Tc = 85°C Pin = +12.5 d Bm, VDD = 4.8 V, VAPC = 0.1 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 d Bm, V DD = 4.8 V, RL = Rg = 50Ω, Tc = 25°C Time from Pout =
- 10 to +34.5 d Bm Pin = +8 d Bm, V DD = 7 V, Pout ≤ 2.8 W (At APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 8 : 1 All phases Test Condition
- - VDD = 10 V, VAPC = 0 V Pin = +8 d Bm, V DD = 4.8 V, Pout = 2.8 W (At APC controlled) RL = Rg = 50Ω, Tc = 25°C
Output power (2)
Pout (2)
- W
Isolation
- -
- 35
- 20 d Bm
Switching time t r, t f
-...