PF01411B Datasheet | Hitachi Semiconductor

Features - - - - High gain 3stage amplifier : 0 d Bm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 d Bm Wide gain control range : 70 d B Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10 - 30 to +100 - 30 to +100 5 Unit V A V m W °C °C W Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 880 0.5 - 40 - - - 35.5 Typ - - - 45 - 45 - 45 1.5 36.0 Max 915 2.2 100 - - 35 - 35 3 - Unit MHz V µA % d Bc d Bc - d Bm Pin = 0d Bm, VDD = 3.5V, VAPC = 2.2V, RL = Rg = 50Ω, Tc = 25°C Pin = 0d Bm, VDD = 3.0V, VAPC = 2.2V, RL = Rg = 50Ω, Tc = 85°C Pin = 0d Bm, VDD = 3.5V, VAPC = 0.5V, RL = Rg = 50Ω, Tc = 25°C Pin = 0d Bm, VDD = 3.5V, Pout = 0 to 35.5d Bm RL = Rg = 50Ω, Tc = 25°C Pin = 0d Bm, VDD = 3 to 5.1V, Pout ≤ 35.5d Bm, Vapc ≤ 2.2V GSM pulse. Rg = 50Ω, Tc = 25°C, Output VSWR = 6 : 1 All phases Pin = 0d Bm, VDD = 3 to 5.1V, Pout ≤ 35.5d Bm, Vapc ≤ 2.2V GSM pulse. Rg = 50Ω, t = 20sec., Tc = 25°C, Output VSWR = 10 : 1 All phases VDD = 8V, VAPC = 0V Pin = 0d Bm, VDD = 3.5V, Pout = 35.5d Bm, Vapc = control RL = Rg = 50Ω, Tc = 25°C Test Condition Output power (2) Pout (2) - d Bm Isolation - - - 40 - 36 d Bm Switching time tr, tf - 1 µs Stability - No parasitic...