HMC-APH196 Datasheet | Hittite Microwave Corporation

HMC-APH196 v02.0209 Ga As HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz Features Output IP3: +31 d Bm P1d B: +22 d Bm Gain: 20 d B @ 20 GHz Supply Voltage: +4.5V 50 Ohm Matched Input/Output Die Size: 3.3 x 1.95 x 0.1 mm Typical Applications This HMC-APH196 is ideal for: - Point-to-Point Radios LINEAR & POWER AMPLIFIERS - CHIP - Point-to-Multi-Point Radios - VSAT - Military & Space Functional Diagram General Description The HMC-APH196 is a two stage Ga As HEMT MMIC Medium Power Amplifier which operates between 17 and 30 GHz. The HMC-APH196 provides 20 d B of gain at 20 GHz, and an output power of +22 d Bm at 1 d B pression from a +4.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH196 Ga As HEMT MMIC Medium Power Amplifier is patible with conventional die attach methods, as well as thermopression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = 4.5V, Idd1 + Idd2 = 400 m A [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output Power for 1 d B pression (P1d B) Output Third Order Intercept (IP3) Supply Current (Idd1 + Idd2) 20 15 Min Typ 17 - 24 20 17 25 22 31 400 20 14 Max Min Typ 24 - 27 17 17 23 22 31 400 20 11 Max Min Typ 27 - 30 16 17 23 22 31 400 Max Units GHz d B d B d B d Bm d Bm d Bm [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd total = 400 m A - 160 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at .hittite. HMC-APH196 v02.0209 Ga As HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz Pulsed Gain vs....