HMC-APH473 Datasheet | Hittite Microwave Corporation

HMC-APH473 v03.0209 Ga As HEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Typical Applications This HMC-APH473 is ideal for: - Point-to-Point Radios Features Output IP3: +37 d Bm P1d B: +28 d Bm Gain: 15 d B Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 3.59 x 1.26 x 0.1 mm LINEAR & POWER AMPLIFIERS - CHIP - Point-to-Multi-Point Radios - VSAT - Military & Space Functional Diagram General Description The HMC-APH473 is a two stage Ga As HEMT MMIC 0.6 Watt Power Amplifier which operates between 37 and 40 GHz. The HMC-APH473 provides 15 d B of gain, and an output power of +28 d Bm at 1 d B pression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH473 Ga As HEMT MMIC 1 Watt Power Amplifier is patible with conventional die attach methods, as well as thermopression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations [1] , TA = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 1080 m A [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1d B pression (P1d B) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd total = 1080 m A 11 Min. Typ. 37 - 40 15 10 14 28 37 1080 Max. Units GHz d B d B d B d Bm d Bm m A - 184 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at .hittite. HMC-APH473 v03.0209 Ga As HEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Fixtured Gain vs. Frequency 20 18 16 14 12 10 Fixtured Power vs. Frequency 40 38 POUT (d Bm) 36 34 32 IP3@18d Bm/Tone P1d B GAIN (d...