HMC-APH462
HMC-APH462 is GaAs HEMT MMIC 1 WATT POWER AMPLIFIER manufactured by Hittite Microwave Corporation.
.. v03.0209
Ga As HEMT MMIC 1 WATT POWER AMPLIFIER, 15
- 27 GHz
Typical Applications
This HMC-APH462 is ideal for:
- Point-to-Point Radios
Features
Output IP3: +37 d Bm P1d B: +29 d Bm Gain: 17 d B Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 3.70 x 2.62 x 0.1 mm
LINEAR & POWER AMPLIFIERS
- CHIP
- Point-to-Multi-Point Radios
- VSAT
- Military & Space
Functional Diagram
General Description
The HMC-APH462 is a high dynamic range, two stage Ga As HEMT MMIC 0.8 Watt Power Amplifier which operates between 15 and 27 GHz. The HMC-APH462 provides 17 d B of gain, and an output power of +29 d Bm at 1 d B pression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH462 Ga As HEMT MMIC 1 Watt Power Amplifier is patible with conventional die attach methods, as well as thermopression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifi cations[1]
TA = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 m A [2]
Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1d B pression (P1d B) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2 + Idd3 + Idd4) 12 Min. Typ. 15
- 17 16 15 15 26 34 1440 27 13 Max. Min. Typ. 17
- 27 17 18 18 29 37 1440 m A Max. Units GHz d B d B d B d Bm
[1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 m A, Idd2 + Idd3 = 960 m A
- 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at .hittite.
.. v03.0209
Ga As...