HMC-APH478 Datasheet | Hittite Microwave Corporation

HMC-APH478 v02.0208 Ga As HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz Features Output IP3: +38.5 d Bm P1d B: +30 d Bm Gain: 17.5 d B Supply Voltage: +5V 50 Ohm Matched Input/Output Typical Applications This HMC-APH478 is ideal for: - Point-to-Point Radios LINEAR & POWER AMPLIFIERS - CHIP - Point-to-Multi-Point Radios - Military & Space Die Size: 3.92 x 1.28 x 0.1 mm Functional Diagram General Description The HMC-APH478 is a two stage Ga As HEMT MMIC 1 Watt Power Amplifier which operates between 18 and 20 GHz. The HMC-APH478 provides 17.5 d B of gain, and an output power of +30 d Bm at 1 d B pression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH478 Ga As HEMT MMIC 1 Watt Power Amplifier is patible with conventional die attach methods, as well as thermopression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 m A [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1d B pression (P1d B) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2) 28.5 16 Min. Typ. 18 - 20 17.5 8 5 30 38.5 900 Max. Units GHz d B d B d B d Bm d Bm m A [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 300 m A, Idd2 = 600 m A - 190 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at .hittite. HMC-APH478 v02.0208 Ga As HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz Linear Gain vs. Frequency Fixtured Pout vs. Frequency 40 38 POUT (d Bm) 36 34 32 P1d B P3d B OIP3 18 GAIN (d...