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Silicon N-Channel Power MOSFET
CS2N80 A3HY
○R
General Description：
VDSS
800 V
CS2N80 A3HY, the silicon N-channel Enhanced ID
2.0 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
4.8 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard..
Features：
l Fast Switching l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:4.0pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS2N80A3HY Datasheet
