CS3N70A3H-G Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS3N70 A3H-G ○R General Description： VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤4.2 Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche...