H5AN8G6NCJR-xxC Datasheet | SK Hynix

8Gb DDR4 SDRAM 8Gb DDR4 SDRAM Lead-Free&Halogen-Free (Ro HS pliant) H5AN8G4NCJR-xx C H5AN8G8NCJR-xx C H5AN8G6NCJR-xx C - SK hynix reserves the right to change products or specifications without notice. Rev. 1.4 / Oct.2018 Revision History Revision No. 0.1 1.0 1.1 1.2 1.3 1.4 History Initial Release IDD spec update & Changed Features (CS released for 2666 SDP) Speed bin table note update added feature & t REFI and t RFC parameters Define IDD specification (2933) Correct data (Table 12) Draft Date Jul. 2017 Sep. 2017 Apr. 2018 Apr. 2018 Jun. 2018 Oct. 2018 Remark Rev. 1.4 / Oct.2018 Description The H5AN8G4NCJR-- xx C, H5AN8G8NCJR-- xx C, H5AN8G6NCJR-- xx C is a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. Device Features and Ordering Information Features - VDD=VDDQ=1.2V +/- 0.06V - ZQ calibration supported - Fully differential clock inputs (CK, CK) operation - TDQS (Termination Data Strobe) supported (x8 only) - Differential Data Strobe (DQS,...