HY5756820C - 4 Banks x 8M x 8Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY5756820C
Manufacturer	Hynix Semiconductor
File Size	101.17 KB
Description	4 Banks x 8M x 8Bit Synchronous DRAM
Datasheet	HY5756820C Datasheet
Additional preview pages of the HY5756820C datasheet.

Product details

Description

The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1, 2, 4 o.

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Published: Dec 22, 2006 |