HY5756820LT - 4 Banks x 8M x 8Bit Synchronous DRAM

SK Hynix

Download the HY5756820LT datasheet PDF. This datasheet also covers the HY5756820C variant, as both devices belong to the same 4 banks x 8m x 8bit synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

The HY57V56820C is organized as 4banks of 8,388,608x8.

Key Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1, 2, 4 o.

📥 Download Datasheet

HY5756820LT 4 banks x 8m x 8bit synchronous dram by SK Hynix - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HY5756820C_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HY5756820LT
Manufacturer	SK Hynix
File Size	101.17 KB
Description	4 Banks x 8M x 8Bit Synchronous DRAM
Datasheet	HY5756820LT Datasheet

Full PDF Text Transcription for HY5756820LT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY5756820LT. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY57V56820C(L)T 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the mai...

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is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820C is organized as 4banks of 8,388,608x8. The HY57V56820C is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

More Datasheets from SK Hynix

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HY5756820C	4 Banks x 8M x 8Bit Synchronous DRAM
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