HY5DU283222F Datasheet | SK Hynix

description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Sep. 02 1 Rvision History Revision No. 0.4 History 1) Part Number changed from HY5DU283222F to HY6U22F 1) t AC/t DQSCK, t RCD/t RP parameters each speed changed as the followings a) t AC : changed from 0.7ns to 0.9ns at 3.3/4/4.5ns b) t DQSCK : changed from 0.6ns to 0.7ns at 3.3/4/4.5ns c) t RCD/t RP : changed from 5clk to 6clk at 3.3ns and 4clk to 5clk at 4/4.5ns 1) 222Mhz speed bin removed 2) IDD Specification of 200/250MHz part defined 3) AC parameters of 275MHz part defined 4) Vi H/Vi L changed Vref+/- 0.35 into Vref +/- 0.45 5) Part number changed from HY6U22F to HY5DU283222F 1) Pin capacitance defined a) CK, /CK, All other input-only pins : min 1p F, Max 3PF b) DQ, DQS, DM : min 3p F, Max 5p F 1) 2) 3) 4) 5) 1) 2) 3) 4) 200MHz t CK Max. changed from 7ns to 10ns Device operation and timing diagram removed t RCD/t RP at 275MHz changed from 6clk to 5clk t RC/t RFC SPEC newly defined 375/350MHz AC parameters defined IDD4 SPEC changed 370m A to 300m A 275/300MHz IDD SPEC defined t RC/t RFC/t RAS SPEC. updated Power dissipation SPEC. changed from 1W to 2W Draft Date May.01 Remark Jun. 01 Oct.01 Nov.01 Dec.01 Dec.01 1.0 1.1 1) Input leakage current changed from +/-5u A to +/-2u A 1) Defined t PDEX parameter 2) Added AC CHARACTERISTICS-II table 1) Changed VDD/VDDQ value - 350/375MHz : Changed from 2.66V/2.80V/2.94V to 2.76V/2.90V/3.05V (min/typ/max) 2) IDD4 SPEC at 200MHz changed 300m A to 370m A May. 02 May. 02 Sep. 02 Rev. 1.2/Sep. 02 HY5DU283222F DESCRIPTION The Hynix HY5DU283222F is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 4Mx32 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all...