HY5DU283222BF Datasheet PDF - Hynix Semiconductor 128M(4Mx32) GDDR SDRAM Specs

HY5DU283222BF - 128M(4Mx32) GDDR SDRAM

Datasheet Summary

Description

and is subject to change without notice.

responsibility for use of circuits described.

No patent licenses are implied.

Features

The Hynix HY5DU283222BF(P) guarantee until 200MHz speed at DLL_off condition.
2.5V VDD and VDDQ wide range max power supply supports.
All inputs and outputs are compatible with SSTL_2 interface.
12mm x 12mm, 144ball FBGA with 0.8mm pin pitch.
Fully differential clock inputs (CK, /CK) operation.
Double data rate interface.
Source synchronous - data transaction aligned to bidirectional data strobe (DQS0 ~ DQS3).
Data outputs.

Datasheet Details

Part number	HY5DU283222BF
Manufacturer	Hynix Semiconductor
File Size	248.80 KB
Description	128M(4Mx32) GDDR SDRAM
Datasheet	HY5DU283222BF Datasheet
Additional preview pages of the HY5DU283222BF datasheet.

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Full PDF Text Transcription

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HY5DU283222BF(P) 128M(4Mx32) GDDR SDRAM HY5DU283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Feb. 2005 1 1HY5DU283222BF(P) Revision History No. History 0.1 1) Defined Target Spec. 0.2 1) Added 200MHz speed bin 0.3 1) Changed Cas Latency to 4 clock from 5 clock at 300Mhz/275Mhz/ 250Mhz speed bin 0.4 1) Changed IDD & 500Mhz speed bin insert, 2) Changed tRCDWR, tWR at 450Mhz speed bin 1.0 1) Changed IDD Spec. 2) Changed CAS Latency to 4 clock from 5 clock at 350MHz speed bin Draft Date Jun. 2004 Jun. 2004 Sep. 2004 Remark Oct. 2004 Feb. 2005 Rev. 1.0 / Feb.

Published: Mar 17, 2015 |