Datasheet4U.com

HY5RS573225F - 256 GDDR3 SDRAM

Product Overview

Hynix Semiconductor

📥 Download Datasheet

HY5RS573225F 256 GDDR3 SDRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY5RS573225F

Datasheet Details

Part number	HY5RS573225F
Manufacturer	Hynix Semiconductor
File Size	1.29 MB
Description	256 GDDR3 SDRAM
Datasheet	HY5RS573225F Datasheet
Additional preview pages of the HY5RS573225F datasheet.

HY5RS573225F Product details

Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

VDD=1.8V ± 0.1V, VDDQ=1.8V ± 0.1V Single ended READ Strobe (RDQS) per byte Single ended WRITE Strobe (WDQS) per byte Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Calibrated output drive Differential clock inputs (CK and CK#) Commands entered on each positive CK edge RDQS edge-aligned with data for READs; with WDQS center-aligned with data for WRITEs Four interna.

📁 Similar Datasheet

HY5-P - Current Transducers HY 5 to 25-P (LEM)
HY50-P - Current Transducer HY 50-P (LEM)
HY5002 - 1-chip composed of high-current totem pole (HAWYANG)
HY5012A - N-Channel Enhancement Mode MOSFET (HOOYI)
HY5012W - N-Channel Enhancement Mode MOSFET (HOOYI)
HY50P - Current Transducers/ HY 50-P/SP1 (LEM)
HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)
HY5110A - N-Channel Enhancement Mode MOSFET (HUAYI)
HY5110NA2W - N-Channel Enhancement Mode MOSFET (HUAYI)

Other Datasheets by Hynix Semiconductor

HY5RS123235BFP - 512Mbit GDDR3 SDRAM
HY5RS123235FP - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-11 - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-12 - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-14 - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-16 - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-2 - 512M (16Mx32) GDDR3 SDRAM
HY5R128HC745 - (HY5R1xxHCxxx) RDRAM

Published: Aug 21, 2008 |