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HY5V62CF - 4 Banks X 512K X 32Bit Synchronous DRAM

Description

The Hynix HY5V62C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth.

HY5V62C is organized as 4banks of 524,288x32.

HY5V62C is offering fully synchronous operation referenced to a positive edge of the clock.

Features

  • JEDEC standard 3.3V power supply All device pins are compatible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM0,1,2 and 3.
  • Internal four banks operation.
  • Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks.
  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Bu.

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Datasheet Details

Part number HY5V62CF
Manufacturer Hynix Semiconductor
File Size 380.21 KB
Description 4 Banks X 512K X 32Bit Synchronous DRAM
Datasheet download datasheet HY5V62CF Datasheet
Additional preview pages of the HY5V62CF datasheet.

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www.DataSheet4U.com HY5V62CF 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V62C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V62C is organized as 4banks of 524,288x32. HY5V62C is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
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