HY5V62CF - 4 Banks X 512K X 32Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY5V62CF
Manufacturer	Hynix Semiconductor
File Size	380.21 KB
Description	4 Banks X 512K X 32Bit Synchronous DRAM
Datasheet	HY5V62CF Datasheet
Additional preview pages of the HY5V62CF datasheet.

Product details

Description

The Hynix HY5V62C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth.

Features

JEDEC standard 3.3V power supply All device pins are compatible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM0,1,2 and 3.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Bu.

📁 Similar Datasheet

HY5-P - Current Transducers HY 5 to 25-P (LEM)
HY50-P - Current Transducer HY 50-P (LEM)
HY5002 - 1-chip composed of high-current totem pole (HAWYANG)
HY5012A - N-Channel Enhancement Mode MOSFET (HOOYI)
HY5012W - N-Channel Enhancement Mode MOSFET (HOOYI)
HY50P - Current Transducers/ HY 50-P/SP1 (LEM)
HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)

Other Datasheets by Hynix Semiconductor

HY5V66EF6 - (HY5V66ExF6x) CMOS Synchronous DRAM
HY5V66EF6P - (HY5V66ExF6x) CMOS Synchronous DRAM
HY5V66ELF6 - (HY5V66ExF6x) CMOS Synchronous DRAM
HY5V66ELF6P - (HY5V66ExF6x) CMOS Synchronous DRAM
HY5V66GF - 4 Banks X 1M X 16Bit Synchronous DRAM
HY5V22F - 4 Banks x 1M x 32Bit Synchronous DRAM

Published: Mar 6, 2007 |