HY5V66GF Overview
The Hyundai HY5V66GF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5V66GF is organized as 4banks of 1,048,576x16. HY5V66GF is offering fully synchronous operation referenced to a positive edge of the clock.
HY5V66GF Key Features
- Single 3.3±0.3V power supply Note) All device pins are patible with LVTTL interface JEDEC standard 60Ball FD-BGA with 0.
- Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency ; 2, 3 Clocks
- ORDERING INFORMATION