HY5V66GF - 4 Banks X 1M X 16Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY5V66GF
Manufacturer	Hynix Semiconductor
File Size	235.30 KB
Description	4 Banks X 1M X 16Bit Synchronous DRAM
Datasheet	HY5V66GF Datasheet
Additional preview pages of the HY5V66GF datasheet.

Product details

Description

The Hyundai HY5V66GF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply Note) All device pins are compatible with LVTTL interface JEDEC standard 60Ball FD-BGA with 0.65mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operation.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst - 1, 2, 4 or.

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Published: Mar 6, 2007 |