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HY5V66ELF6 Datasheet

Manufacturer: SK Hynix

This datasheet includes multiple variants, all published together in a single manufacturer document.

HY5V66ELF6 datasheet preview

Datasheet Details

Part number HY5V66ELF6
Datasheet HY5V66ELF6 HY5V66EF6 Datasheet (PDF)
File Size 253.56 KB
Manufacturer SK Hynix
Description (HY5V66ExF6x) CMOS Synchronous DRAM
HY5V66ELF6 page 2 HY5V66ELF6 page 3

HY5V66ELF6 Overview

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5V66ELF6 Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 60 Ball FBGA (Lead or Lead Free
  • Internal four banks operation
  • Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or full page for Sequential Burst
  • 1, 2, 4 or 8 for Interleave Burst
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HY5V66ELF6 Distributor

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