Download the HY5V66EF6P datasheet PDF.
This datasheet also covers the HY5V66EF6 variant, as both devices belong to the same (hy5v66exf6x) cmos synchronous dram family and are provided as variant models within a single manufacturer datasheet.
General Description
and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Key Features
Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 60 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks.
Auto refresh and self refresh 4096 Refresh cycles / 64ms.
Note: The manufacturer provides a single datasheet file (HY5V66EF6_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HY5V66EF6P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY5V66EF6P. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 Initial Draft...
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bits Synchronous DRAM Revision History Revision No. 0.01 Initial Draft 1. Editorial chage 0.80Typ --> 0.45 +/-0.05 (page12, Ball Dimension) Before dimension : History Draft Date Dec. 2004 Remark Preliminary 0.80 Typ. 0.65 Typ. 0.2 After dimension : June. 2005 Preliminary 0.450 +/- 0.05 0.65 Typ. 2. Added Speed Product(100MHz CL2) (see to Page 02) This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / June. 2005 1 www.DataSheet4U.
HY5V66EF6P Datasheet
