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HY5V66EF6P - (HY5V66ExF6x) CMOS Synchronous DRAM

Product Overview

Hynix Semiconductor

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HY5V66EF6P (HY5V66ExF6x) CMOS Synchronous DRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY5V66EF6P

Datasheet Details

Part number	HY5V66EF6P
Manufacturer	Hynix Semiconductor
File Size	253.56 KB
Description	(HY5V66ExF6x) CMOS Synchronous DRAM
Datasheet	HY5V66EF6P Datasheet
Note	This datasheet PDF includes multiple part numbers: HY5V66EF6P, HY5V66EF6. Please refer to the document for exact specifications by model.
Additional preview pages of the HY5V66EF6P datasheet.

Product details

Description

and is subject to change without notice.

Features

Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 60 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks.
Auto refresh and self refresh 4096 Refresh cycles / 64ms.

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Published: Mar 6, 2007 |