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HY57V28420BT Datasheet 4banks X 8m X 4bits Synchronous Dram

Manufacturer: SK Hynix

Overview: HY57V28420B(L)T 4Banks x 8M x 4bits Synchronous DRAM.

Datasheet Details

Part number HY57V28420BT
Manufacturer SK Hynix
File Size 279.68 KB
Description 4Banks x 8M x 4bits Synchronous DRAM
Datasheet HY57V28420BT_Hynix.pdf

General Description

Preliminary The Hynix HY57V28420B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V28420B(L)T is organized as 4banks of 8,388,608x4.

HY57V28420B(L)T is offering fully synchronous operation referenced to a positive edge of the clock.

Key Features

  • Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
  • http://www. DataSheet4U. net/.
  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequenti.

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