• Part: HY5W6B6DLF
  • Description: 4 Bank x 1 M x 16 Bit Synchronous DRAM
  • Manufacturer: SK Hynix
  • Size: 330.15 KB
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HY5W6B6DLF Key Features

  • Power Supply Voltage : VDD = 2.5V, VDDQ = 2.5V LVCMOS patible I/O Interface Low Voltage interface to reduce I/O power Lo
  • PASR(Partial Array Self Refresh)
  • AUTO TCSR (Temperature pensated Self Refresh)
  • DS (Drive Strength)
  • Deep Power Down Mode Programmable CAS latency of 1, 2 or 3 Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead)
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