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HY5W6B6DLF - 4 Bank x 1 M x 16 Bit Synchronous DRAM

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Standard SDRAM Protocol Internal 4bank operation.
  • Power Supply Voltage : VDD = 2.5V, VDDQ = 2.5V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features - PASR(Partial Array Self Refresh) - AUTO TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength) - Deep Power Down Mode Programmable CAS latency of 1, 2 or 3 Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) HY5W6B6DLFP : Lead Free HY5W6B6DLF : Lead.

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Datasheet Details

Part number HY5W6B6DLF
Manufacturer SK Hynix
File Size 330.15 KB
Description 4 Bank x 1 M x 16 Bit Synchronous DRAM
Datasheet download datasheet HY5W6B6DLF Datasheet

Full PDF Text Transcription for HY5W6B6DLF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY5W6B6DLF. For precise diagrams, and layout, please refer to the original PDF.

Preliminary HY5W6B6DLF(P)-xE 4Banks x1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initial Dr...

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Synchronous DRAM Revision History Revision No. 0.1 History Initial Draft Draft Date February 2004 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Feb. 2004 1 Preliminary HY5W6B6DLF(P)-xE 4Banks x1M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.

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