IDT71V3578S Datasheet | IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect IDT71V3576S IDT71V3578S Features - 128K x 36, 256K x 18 memory configurations - Supports high system speed: mercial and Industrial: - 150MHz 3.8ns clock access time - 133MHz 4.2ns clock access time - LBO input selects interleaved or linear burst mode - Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) - 3.3V core power supply - Power down controlled by ZZ input - 3.3V I/O - Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP) Description The IDT71V3576/78 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3576/78 SRAMs contain write, data, addressandcontrolregisters. Internallogicallowsthe SRAMtogenerate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the...