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IDT71V65702 - (IDT71V65702 / IDT71V65902) Synchronous ZBT SRAMs

General Description

The IDT71V65702/5902 are 3.3V high-speed 9,437,184-bit (9 Megabit) synchronous SRAMs organized as 256K x 36 / 512K x 18.

They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads.

Key Features

  • 256K x 36, 512K x 18 memory configurations Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ZBTTM Feature - No dead cycles between write and read cycles Internally synchronized output buffer enable eliminates the need to control OE Single R/W (READ/WRITE) control pin 4-word burst capability (Interleaved or linear) Individual byte write (BW1-BW4) control (May tie active) Three chip enables for simple depth expansion 3.3V power supply (±5%) 2.5V (±5%) I/O Supply (VDD.

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Datasheet Details

Part number IDT71V65702
Manufacturer IDT
File Size 520.57 KB
Description (IDT71V65702 / IDT71V65902) Synchronous ZBT SRAMs
Datasheet download datasheet IDT71V65702 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs x x x x x x x x x x x x IDT71V65702 IDT71V65902 Features 256K x 36, 512K x 18 memory configurations Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ZBTTM Feature - No dead cycles between write and read cycles Internally synchronized output buffer enable eliminates the need to control OE Single R/W (READ/WRITE) control pin 4-word burst capability (Interleaved or linear) Individual byte write (BW1-BW4) control (May tie active) Three chip enables for simple depth expansion 3.3V power supply (±5%) 2.