Inchange Semiconductor 2N3442
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N3442 |
|---|---|
| Datasheet | 2N3442 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min.)
●Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max)@ IC = 10A
APPLICATIONS
●Designed for use in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A IB Base Current-Continuous 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.49 ℃/W 2N3442 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SU...