onsemi 2N3442
High-Power Industrial Transistors
| Part No. | 2N3442 |
|---|---|
| Datasheet | 2N3442 Download |
| Manufacturer |  onsemi |
| Description | High-Power Industrial Transistors |
| Buy | Stock & Price |
FEATURES
● Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)● Excellent Second Breakdown Capability
● Pb−Free Package is Available*
MAXIMUM RATINGS
(Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current − Continuous − Peak − Continuous − Peak Symbol VCEO VCB VEB IC IB PD TJ, Tstg Value 140 160 7.0 10 15 7.0 − 117 0.67 −65 to +200 Unit Vdc Vdc Vdc Adc Adc W W/_C _C 10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS − 117 WATTS TO−204AA (TO−3) CASE 1−07 STYLE 1 Total Device Dissipation @ TC = 25_C Derate above 25_C (Note 2) Operating and Storage Junction Temperature Range MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.17 Unit _C/W 2N3442G AYWW MEX Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
