Microsemi 2N3442
NPN HIGH POWER SILICON TRANSISTOR
| Part No. | 2N3442 |
|---|---|
| Datasheet | 2N3442 Download |
| Manufacturer |  Microsemi |
| Description | NPN HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VCER VEBO IB IC PT TJ, Tstg Symbol RθJC Value 140 160 150 7.0 7.0 10 6.0 117 -55 to +200 Max. 1.5 Units Vdc Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range TO-3* (TO-204AA) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.2 mW/0C for TA > 250C 2) Derate linearly 668 mW/0C for TC > 250C 0 *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO V(BR)CER V(BR)CEX ICEX IEBO Min. 140 150 160 1.0 1.0 Max. Unit Vdc Vdc Vdc mAdc mAdc OFF CHARACTERISTICS Collector-Emitter Voltage IC = 3.0 Adc Collector-Emitter Breakdown Voltage IC = 1.5 Adc, RBE = 100 Ω Collector-Emitter Breakdown Voltage IC = 1.5 Adc, VEB = 1.5 Vdc C...
