Inchange Semiconductor 2N6609
Silicon PNP Power Transistor
| Part No. | 2N6609 |
|---|---|
| Datasheet | 2N6609 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●High DC Current Gain-hFE=15(Min)@IC = -8A
●Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A
●Complement to Type 2N3773
APPLICATIONS
●Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEX Collector-Emitter Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -16 A ICP Collector Current-Peak -30 A IB Base Current-Continuous -4 A IBP Base Current-Peak -15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBO