Multicomp 2N6609
Complementary Power Transistor
| Part No. | 2N6609 |
|---|---|
| Datasheet | 2N6609 Download |
| Manufacturer |  Multicomp |
| Description | Complementary Power Transistor |
| Buy | Stock & Price |
FEATURES
:● High Power Dissipation PD = 150W (TC = 25°C).
● High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at IC = 8A, IB = 0.8A. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres
MAXIMUM RATINGS
Characteristic Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak (1) Base Current-Continuous -Peak (1) Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO(SUS) VCEX VCBO VEBO IC ICM IB IBM PD TJ, TSTG Rating 140 160 7 16 30 4.0 15 150 0.857 -65 to +200 NPN 2N3773 PNP 2N6609 16 Ampere Complementary Silicon Power Transistors 140 Volts 150 Watts TO-3 Unit V A W W/°C °C Page 1 31/05/05 V1.0 2N3773, 6609 Complem...
