Datasheet4U.com

2N6609 - Complementary Power Transistor

Product Overview

Multicomp

📥 Download Datasheet

2N6609 Complementary Power Transistor by Multicomp - Datasheet Preview — Datasheet preview – 2N6609

Datasheet Details

Part number	2N6609
Manufacturer	Multicomp
File Size	348.81 KB
Description	Complementary Power Transistor
Datasheet	2N6609 Datasheet
Additional preview pages of the 2N6609 datasheet.

Product details

Features

High Power Dissipation PD = 150W (TC = 25°C).
High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at IC = 8A, IB = 0.8A. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Maximum Ratings Characteris.

📁 Similar Datasheet

2N6609 - COMPLEMENTARY POWER TRANSISTORS (ON Semiconductor)
2N6609 - COMPLEMENTARY SILICON POWER TRANSITORS (Central Semiconductor)
2N6609 - Silicon PNP Transistor (NTE)
2N6609 - Silicon PNP Power Transistor (Inchange Semiconductor)
2N6603 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N6604 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N6620 - NPN SILICON TRANSISTOR (Siemens)
2N6648 - PNP Silicon Power Darlington Transistors (VPT)

Other Datasheets by Multicomp

2N6042 - Bipolar Transistor
2N6054 - Darlington Transistor
2N6056 - Darlington Transistor
2N6123 - Bipolar Transistor
2N6124 - Bipolar Transistor
2N6292 - Bipolar Transistor

Published: Jan 5, 2025 |