2N6609 Datasheet PDF

NTE 2N6609

The 2N6609 is a silicon PNP power transistors in a TO−3 type package designed for high power audio, disk head positioners, and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters.

Part No.	2N6609
Datasheet	2N6609 Download
Manufacturer	NTE
Description	Silicon PNP Transistor
Buy	Stock & Price

DESCRIPTION

FEATURES

: D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A

ABSOLUTE MAXIMUM RATINGS

: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector−Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, Continuous IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N6609 Datasheets by Manufacturer

4 datasheets

Part Number	Manufacturer
2N6609	onsemi
2N6609	Central Semiconductor
2N6609	Inchange Semiconductor
2N6609	Multicomp