2N6609 - Silicon PNP Transistor

Product Overview

NTE

2N6609 Silicon PNP Transistor by NTE - Datasheet Preview — Datasheet preview – 2N6609

Datasheet Details

Part number	2N6609
Manufacturer	NTE
File Size	65.14 KB
Description	Silicon PNP Transistor
Datasheet	2N6609 Datasheet
Additional preview pages of the 2N6609 datasheet.

Product details

Description

The 2N6609 is a silicon PNP power transistors in a TO 3 type package designed for high power audio, disk head positioners, and other linear applications.

Features

D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector.
Emitter Voltage, VCEO.
. . . 140V Collector.
Emitter Voltage, VCEX.

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Published: Feb 3, 2020 |