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2N6609 - Silicon PNP Transistor

General Description

The 2N6609 is a silicon PNP power transistors in a TO

3 type package designed for high power audio, disk head positioners, and other linear applications.

It can also be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters.

Key Features

  • D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.
  • . . . 140V Collector.
  • Emitter Voltage, VCEX.

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Datasheet Details

Part number 2N6609
Manufacturer NTE Electronics (defunct)
File Size 65.14 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2N6609 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6609 Silicon PNP Transistor Audio Amplifier Output TO−3 Type Package Description: The 2N6609 is a silicon PNP power transistors in a TO−3 type package designed for high power audio, disk head positioners, and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Features: D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .