Good Linearity of hFE
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A
Complement to Type 2SC2690/A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Adudio frequency power amplifier
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isc Silicon PNP Power Transistors
2SA1220/A
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A
·Complement to Type 2SC2690/A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
2SA1220
-120
VCBO Collector-Base Voltage
V
2SA1220A -160
2SA1220
-120
VCEO Collector-Emitter Voltage
V
2SA1220A -160
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Te
2SA1220 Datasheet
