Datasheet Details
| Part number | 2SA762 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.18 KB |
| Description | PNP Transistor |
| Datasheet | 2SA762-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA762.
| Part number | 2SA762 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.18 KB |
| Description | PNP Transistor |
| Datasheet | 2SA762-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general purpose power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 23 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA762 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
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