Datasheet Details
| Part number | 2SB508 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.21 KB |
| Description | PNP Transistor |
| Datasheet | 2SB508-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB508.
| Part number | 2SB508 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.21 KB |
| Description | PNP Transistor |
| Datasheet | 2SB508-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD314 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3.0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6.0 A 30 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 4.16 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB508 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
| Part Number | Description |
|---|---|
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB511 | PNP Transistor |
| 2SB512 | PNP Transistor |
| 2SB513 | PNP Transistor |
| 2SB515 | PNP Transistor |
| 2SB518 | PNP Transistor |
| 2SB519 | PNP Transistor |