Datasheet Details
| Part number | 2SB506 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.65 KB |
| Description | PNP Transistor |
| Datasheet | 2SB506-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB506 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.65 KB |
| Description | PNP Transistor |
| Datasheet | 2SB506-INCHANGE.pdf |
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature -5 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor 2SB506 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB506 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB506 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB508 | PNP Transistor |
| 2SB511 | PNP Transistor |
| 2SB512 | PNP Transistor |
| 2SB513 | PNP Transistor |
| 2SB515 | PNP Transistor |
| 2SB518 | PNP Transistor |
| 2SB519 | PNP Transistor |