Datasheet Details
| Part number | 2SB541 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.19 KB |
| Description | PNP Transistor |
| Datasheet | 2SB541-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors 2SB541.
| Part number | 2SB541 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.19 KB |
| Description | PNP Transistor |
| Datasheet | 2SB541-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD388 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
·Suitable for output stage of 40~50 watts audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Collector Current-Pulse PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB541 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB546 | PNP Transistor |
| 2SB546A | PNP Transistor |
| 2SB547 | PNP Transistor |
| 2SB548 | PNP Transistor |
| 2SB549 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB508 | PNP Transistor |