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2SB541 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) High Power Dissipation- : PC= 100W(Max)@TC=25℃ Complement to Type 2SD388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier

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isc Silicon PNP Power Transistors 2SB541 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD388 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Suitable for output stage of 40~50 watts audio amplifiers.