Download 2SB549 Datasheet PDF
Inchange Semiconductor
2SB549
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) - With TO-126 package - plement to Type 2SD415 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -0.8 Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Junction Temperature Tstg Storage Temperature -1.5 1...