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2SB547 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB547.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SD402 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature -200 V -150 V -5.0 V -2 A -3 A -1.5 A 30 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-a Rth j-c Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case 78 4.16 ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB547 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;

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