Datasheet Details
| Part number | 2SB558 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.19 KB |
| Description | PNP Transistor |
| Download | 2SB558 Download (PDF) |
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Overview: isc Silicon PNP Power Transistors.
| Part number | 2SB558 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.19 KB |
| Description | PNP Transistor |
| Download | 2SB558 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SD428 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Recommended for 40W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 7 A 60 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB558 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SB558 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB558 | Silicon PNP Power Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SB550 | PNP Transistor |
| 2SB551 | PNP Transistor |
| 2SB552 | PNP Transistor |
| 2SB553 | PNP Transistor |
| 2SB554 | PNP Transistor |
| 2SB555 | PNP Transistor |
| 2SB556 | PNP Transistor |
| 2SB557 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |