Datasheet Details
| Part number | 2SB669 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.26 KB |
| Description | PNP Transistor |
| Download | 2SB669 Download (PDF) |
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| Part number | 2SB669 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.26 KB |
| Description | PNP Transistor |
| Download | 2SB669 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= -1A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICP Collector Current-Peak -6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB669 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA;
IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA;
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB669.
| Part Number | Description |
|---|---|
| 2SB668 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |
| 2SB612 | PNP Transistor |
| 2SB613 | PNP Transistor |
| 2SB616 | PNP Transistor |