2SB669 datasheet by Inchange Semiconductor.
| Part number | 2SB669 |
|---|---|
| Datasheet | 2SB669-INCHANGE.pdf |
| File Size | 181.26 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB669 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA.
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB668 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |
| 2SB612 | PNP Transistor |
| 2SB613 | PNP Transistor |
| 2SB616 | PNP Transistor |
