2SB669 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB669 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA.