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2SB824 - PNP Transistor

General Description

High Collector Current: IC= -5A Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -3A Wide Area of Safe Operation Complement to Type 2SD1060 APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other gereral large-current switching applic

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isc Silicon PNP Power Transistor 2SB824 DESCRIPTION ·High Collector Current: IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1060 APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other gereral large-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -9 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.