Datasheet Details
| Part number | 2SB823 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.96 KB |
| Description | PNP Transistor |
| Datasheet | 2SB823-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB823.
| Part number | 2SB823 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.96 KB |
| Description | PNP Transistor |
| Datasheet | 2SB823-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB823 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;
| Part Number | Description |
|---|---|
| 2SB824 | PNP Transistor |
| 2SB825 | PNP Transistor |
| 2SB826 | PNP Transistor |
| 2SB827 | PNP Transistor |
| 2SB828 | PNP Transistor |
| 2SB829 | PNP Transistor |
| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |