Datasheet Details
| Part number | 2SC1975 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.31 KB |
| Description | NPN Transistor |
| Download | 2SC1975 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1975.
| Part number | 2SC1975 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.31 KB |
| Description | NPN Transistor |
| Download | 2SC1975 Download (PDF) |
|
|
|
·Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) ·Withstands worst overload conditions.
·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V ICM Collector Current PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 12 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1975 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCBO Collector-Base Breakdown Voltage IC=1mA ;
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