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2SC1975 - NPN Transistor

Datasheet Summary

Description

Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min)

Withstands worst overload conditions.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in transceiver power output applications ABSOLU

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Datasheet Details

Part number 2SC1975
Manufacturer INCHANGE
File Size 180.31 KB
Description NPN Transistor
Datasheet download datasheet 2SC1975 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1975 DESCRIPTION ·Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) ·Withstands worst overload conditions. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V ICM Collector Current PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 12 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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