Inchange Semiconductor 2SC1975
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1975 |
|---|---|
| Datasheet | 2SC1975 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min)●Withstands worst overload conditions.
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Design for used in transceiver power output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V ICM Collector Current PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 12 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1975ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCBO Collector-Base Breakdown Voltage IC=1mA ; IB= 0 120 V VCER Collector- Emitter Breakdown Voltage IC=2mA ; RBE=100Ω 90 V VEBO Emitter-Base Breakdown Voltage IE=10uA ; IC= 0 5 V VCE(sat) Coll...