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2SC2166 - NPN Transistor

General Description

High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability

and reliable operation.

mobile radio applications.

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Full PDF Text Transcription for 2SC2166 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SC2166. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2166 DESCRIPTION ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability ·Minimum Lot-to-...

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13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emitter Voltage RBE= 10Ω 45 V VEBO Emitter-Base Voltage 4 V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 4 A 12.5 W 1.

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