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2SC3544 Datasheet PDF

Inchange Semiconductor 2SC3544

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC3544
Datasheet 2SC3544 Download
Manufacturer
Inchange Semiconductor
Description Silicon NPN RF Transistor
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2SC3544 datasheet page 1 preview

DESCRIPTION

●Low Base Time Constant; rbb’
● CC = 5 ps TYP.
●High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= 5mA, VCE= 10V
●Low Feedback Capacitance; Cre = 0.55 pF TYP.
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for use as UHF oscillator and mixer in a tuner of a TV receiver.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.25 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3544

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA ICBO Collector Cutoff Current VCB=...
2SC3544 page 2 preview