Inchange Semiconductor 2SC3561
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3561 |
|---|---|
| Datasheet | 2SC3561 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min)●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching regulator and high voltage switching applications.●High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 20 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=...