Inchange Semiconductor 2SC3565
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3565 |
|---|---|
| Datasheet | 2SC3565 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min)●Good Linearity of hFE
●Low Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in high frequency high voltage amplifier and TV viedo output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 15 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 VCE(sat) Collector...