Inchange Semiconductor 2SC4003
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4003 |
|---|---|
| Datasheet | 2SC4003 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High hFE●Low collector-to-emitter saturation voltage
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.2 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4003 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC...
