Sanyo Electric 2SC4003
The 2SC4003 is classified by 50mA hFE as follows : Rank D E hFE 60 to 120 100 to 200 Ratings 400 400 5 200 400 1 10 150 --55 to +150 Unit V V V mA mA W W °C °C min 60* 400 400 5 Ratings typ max Unit 0.1 µA 0.1 µA 200* 70 MHz 0.6 V 1.0 V V V V Continued on next page.| Part No. | 2SC4003 |
|---|---|
| Datasheet | 2SC4003 Download |
| Manufacturer |  Sanyo Electric |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage.● Adoption of MBIT process.
● Excellent hFE linearity. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°CELECTRICAL CHARACTERISTICS
at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=300V, IE=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 DC Current Gain hFE VCE=10V, IC=50mA Gain-Bandwidth Product fT VCE=30V, IC=10mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 * : Any and all SANYO products described or contained he...
