LGE 2SC4003
NPN Transistor
| Part No. | 2SC4003 |
|---|---|
| Datasheet | 2SC4003 Download |
| Manufacturer |  LGE |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6VMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 400 400 5 0.2 1 150 -55-150 V V V A W ℃ ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 5V Collector cut-off current ICBO VCB=300V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 µA DC current gain hFE VCE=10V,IC=50mA 60 200 Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=50mA,IB=5mA 1V Transition...