Datasheet4U Logo Datasheet4U.com

2SD133 - NPN Transistor

General Description

Collector Current: IC= 7A Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV horizontal deflection applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1330 Silicon NPN Transistor Panasonic Semiconductor
2SD1336 Power Transistor Inchange Semiconductor
2SD1338 Silicon NPN Transistor Inchange Semiconductor
2SD1302 Silicon NPN Transistor Panasonic Semiconductor
2SD1303 NPN Transistor SEMTECH

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD130 NPN Transistor
2SD1300 NPN Transistor
2SD1301 NPN Transistor
2SD1307 NPN Transistor
2SD1308 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD133 isc website：www.iscsemi.