Datasheet Details
| Part number | 2SD133 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD133-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD133 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD133-INCHANGE.pdf |
|
|
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·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD133 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1330 | Silicon NPN Transistor | Panasonic Semiconductor |
 |
2SD1336 | Power Transistor | Inchange Semiconductor |
|
2SD1338 | Silicon NPN Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2SD130 | NPN Transistor |
| 2SD1300 | NPN Transistor |
| 2SD1301 | NPN Transistor |
| 2SD1307 | NPN Transistor |
| 2SD1308 | NPN Transistor |
| 2SD1309 | Silicon NPN Darlington Power Transistor |
| 2SD1311 | NPN Transistor |
| 2SD1313 | NPN Transistor |
| 2SD1344 | NPN Transistor |
| 2SD1348 | NPN Transistor |