2SD133 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain :

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Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter (0.4) Unit: mm 6.9±0.1 (1.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-L

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Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 0.4 Unit: mm 6.9±0.1 1.5 1.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-t

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